In-Depth Parametric Study of Ar or N2 Plasma Activated Cu Surfaces for Cu-Cu Direct Bonding-Reference-Cited by-同舟云学术

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In-Depth Parametric Study of Ar or N2 Plasma Activated Cu Surfaces for Cu-Cu Direct Bonding

Published:2021-06 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE 71st Electronic Components and Technology Conference (ECTC)
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Author:

Hu Liangxing,Goh Simon Chun Kiat,Tao Jing,Lim Yu Dian,Zhao Peng,Lim Michael Joo Zhong,Tan Chuan Seng

Funder

Agency for Science, Technology and Research (A*STAR)

Nanyang Technological University

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9501397/9501403/09501708.pdf?arnumber=9501708

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of temperature on the mechanisms of Cu nanoparticle sintering: A molecular dynamic study;Powder Technology;2024-05

2. Research progress of hybrid bonding technology for three-dimensional integration;Microelectronics Reliability;2024-04

3. Reliability Study of Two-Step Plasma-Activated Copper-Copper Direct Bonding in Ambient;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

4. Copper-to-Copper Direct Bonding Process Using Current-Induced Enhancement Method;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

5. Time Evolution Study of Two-Step Plasma-Treated Copper-Copper Direct Bonding in Ambient;2023 International Conference on Electronics Packaging (ICEP);2023-04-19

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