Optimal Design of 100–2000 V 4H–SiC Power MOSFETs Using Multi-Objective Particle Swarm Optimization Algorithms-Reference-Cited by-同舟云学术

Optimal Design of 100–2000 V 4H–SiC Power MOSFETs Using Multi-Objective Particle Swarm Optimization Algorithms

Published:2024-05 Issue:5 Volume:45 Page:786-788
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Luo Runding¹^ORCID,Sun Botao²^ORCID,Hou Xinlan¹,Shi Wenhua¹,Zhang Guoqi³^ORCID,Fan Jiajie¹^ORCID

Affiliation:

1. Institute of Future Lighting, Academy for Engineering and Technology, Shanghai Engineering Technology Research Center of SiC Power Device, Fudan University, Shanghai, China

2. Research Institute of Fudan University in Ningbo, Ningbo, China

3. Department of Microelectronics Engineering, Delft University of Technology, Delft, The Netherlands

Funder

National Natural Science Foundation of China

Shanghai Pujiang Program

Shanghai Science and Technology Development Funds

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10509537/10479580.pdf?arnumber=10479580

Reference14 articles.

1. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

2. Survey of High-Temperature Reliability of Power Electronics Packaging Components

3. A Novel 1.2 kV 4H-SiC Buffered-Gate (BG) MOSFET: Analysis and Experimental Results

4. SiC devices for power and high-temperature applications

5. Constant Power Loads and Negative Impedance Instability in Automotive Systems: Definition, Modeling, Stability, and Control of Power Electronic Converters and Motor Drives

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