Efficient Perovskite-Based Red Micro Light-Emitting Diodes-Reference-Cited by-同舟云学术

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Efficient Perovskite-Based Red Micro Light-Emitting Diodes

Published:2024-04 Issue:4 Volume:45 Page:637-640
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Qian Dongmin¹,Liu Jinglong¹,Cao Yu²^ORCID,Cai Yuxiao¹,Tao Xiangru¹,Zhu Wei¹,Wang Nana¹^ORCID,Wang Jianpu¹^ORCID

Affiliation:

1. Key Laboratory of Flexible Electronics (KLOFE), the Institute of Advanced Materials (IAM), and the School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), Nanjing, China

2. Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Practice Innovation Program of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10443010.pdf?arnumber=10443010

Reference23 articles.

1. High-Brightness InGaN/GaN Micro-LEDs With Secondary Peak Effect for Displays

2. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments

3. Red InGaN micro-light-emitting diodes (>620 nm) with a peak external quantum efficiency of 4.5% using an epitaxial tunnel junction contact

4. 2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off

5. Size-dependent efficiency and efficiency droop of blue InGaN micro-light emitting diodes

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