High-Sensitivity MoO3-x /Bi2O2Se Hybrid Photodetector Operating at Wavelengths of O-Band and C-Band-Reference-Cited by-同舟云学术

High-Sensitivity MoO_3-x/Bi₂O₂Se Hybrid Photodetector Operating at Wavelengths of O-Band and C-Band

Published:2024-04 Issue:4 Volume:45 Page:613-616
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yu Yuanfang¹^ORCID,Liu Lin²,Cui Yueying²,Wang Yufan¹,Tang Senyao¹,Liu Junting³,Lu Junpeng²^ORCID

Affiliation:

1. State Key Laboratory for Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, China

2. School of Physics, and the Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, China

3. State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, Shandong University, Jinan, Shandong, China

Funder

Natural Science Research Start-Up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10479122/10422969.pdf?arnumber=10422969

Reference29 articles.

1. High-fidelity entanglement between a trapped ion and a telecom photon via quantum frequency conversion

2. Seven-core multicore fiber transmissions for passive optical network

3. Nonvolatile infrared memory in MoS 2 /PbS van der Waals heterostructures

4. Short-Wave Near-Infrared Polarization Sensitive Photodetector Based on GaSb Nanowire

5. Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing

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