Nonvolatile infrared memory in MoS 2 /PbS van der Waals heterostructures-Reference-Cited by-同舟云学术

Nonvolatile infrared memory in MoS 2 /PbS van der Waals heterostructures

Published:2018-04-06 Issue:4 Volume:4 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Wang Qisheng¹²^ORCID,Wen Yao¹³⁴,Cai Kaiming²,Cheng Ruiqing¹⁴⁵,Yin Lei¹⁴⁵,Zhang Yu¹⁴⁵,Li Jie¹⁴⁵,Wang Zhenxing¹⁴⁵,Wang Feng¹⁴⁵,Wang Fengmei¹⁴⁵,Shifa Tofik Ahmed¹⁴⁵,Jiang Chao¹³⁴,Yang Hyunsoo²,He Jun¹⁴⁵^ORCID

Affiliation:

1. Chinese Academy of Sciences (CAS) Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China.

2. Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore, Singapore.

3. CAS Key Laboratory for Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China.

4. University of Chinese Academy of Sciences, Beijing 100049, China.

5. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China.

Abstract

Researchers demonstrate a nonvolatile infrared memory cell operating in the optical communication wavebands.

Funder

National Natural Science Foundation of China

Ministry of Science and Technology of China

A*STAR’s Pharos Programme on Topological Insulators

Ministry of Education-Singapore Academic Research Fund

Strategic Priority Research Program of the Chinese Academy of Sciences

Youth Innovation Promotion Association CAS

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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