Design and Fabrication of Novel Darlington Transistor Using Light-Emitting Transistors for Smart Thermal Sensor Technology-Reference-Cited by-同舟云学术

Design and Fabrication of Novel Darlington Transistor Using Light-Emitting Transistors for Smart Thermal Sensor Technology

Published:2024-07 Issue:7 Volume:45 Page:1365-1368
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kumar Mukul¹^ORCID,Hsueh Kuang-Yu²^ORCID,Hsu Shu-Jui²^ORCID,Wu Chao-Hsin³^ORCID

Affiliation:

1. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan

2. Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan

3. Graduate Institute of Photonics and Optoelectronics, Graduate Institute of Electronics Engineering, and the Graduate School of Advanced Technology, National Taiwan University, Taipei, Taiwan

Funder

National Chung-Shan Institute of Science and Technology

Powerchip Semiconductor Manufacturing Corporation (PSMC), Taipei, Taiwan

National Taiwan University System (NTUS) Innovation Cooperation, Taiwan

National Taiwan University

Center for Quantum Science and Engineering, National Taiwan University

Academia Sinica, Taiwan

Ministry of Science and Technology, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10577506/10535464.pdf?arnumber=10535464

Reference16 articles.

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2. Quantum-well-base heterojunction bipolar light-emitting transistor

3. Effect of Quantum-Well Number on the Current Gain of Heterojunction Bipolar Light-Emitting Transistors

4. 4.3 GHz optical bandwidth light emitting transistor

5. Current Gain Enhancement at High-Temperature Operation of Triple-Quantum-Well Heterojunction Bipolar Light-Emitting Transistor for Smart Thermal Sensor Application