Author:
Kumar Mukul,Hsueh Lu-Ching,Cheng Sheng-Wen,Ho Shu-Yun,Hsu Shu-Jui,Wu Chao-Hsin
Abstract
We report the current gain decreases with adding the multiple-quantum-well (MQW) in the base of the heterojunction bipolar light-emitting transistors (HBLETs). The simulation result is consistent with experimental I-V characteristics for single-quantum-well (1QW) HBLET.
Cited by
2 articles.
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