Metamorphic H-Band Low-Noise Amplifier MMICs

Author:

Tessmann A.1,Leuther A.2,Massler H.2,Bronner W.2,Schlechtweg M.2,Weimann G.2

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany. Email: Axel.Tessmann@iaf.fraunhofer.de

2. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, D-79108 Freiburg, Germany

Publisher

IEEE

Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Amplifiers;Fundamentals of RF and Microwave Techniques and Technologies;2023

2. Broadband 300-GHz Power Amplifier MMICs in InGaAs mHEMT Technology;IEEE Transactions on Terahertz Science and Technology;2020-05

3. 300-GHz Amplifier in 75-nm InP HEMT Technology;IEICE Transactions on Electronics;2016

4. 93–133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology;Japanese Journal of Applied Physics;2013-04-01

5. A High Gain 600 GHz Amplifier TMIC Using 35 nm Metamorphic HEMT Technology;2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS);2012-10

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