Affiliation:
1. Fujitsu Limited
2. Fujitsu Laboratories Ltd.
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. [1] S. Koenig, D. Lopez-Diaz, J. Antes, F. Boes, R. Henneberger, A. Leuther, A. Tessmann, R. Schmogrow, D. Hillerkuss, R. Palmer, T. Zwick, C. Koos, W. Freude, O. Ambacher, J. Leuthold, and I. Kallfass, “Wireless sub-THz communication system with high data rate,” Nature Photonics, 7, pp.977-981, 2013.
2. [2] A. Tessmann, A. Leuther, H. Massler, M. Kuri, M. Riessle, M. Zink, R. Sommer, A. Wahlen, and H. Essen, “Metamorphic HEMT Amplifier Circuits for Use in a High Resolution 210 GHz Radar,” Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE, pp.1-4, 14-17 Oct. 2007.
3. [3] W.R. Deal and G. Chattopadhyay, “InP HEMT integrated circuits for Submillimeter Wave radiometers in earth remote sensing,” Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, pp.1-3, 17-22 June 2012.
4. [4] X. Mei, W. Yoshida, M. Lange, J. Lee, J. Zhou, Po-Hsin Liu, K. Leong, A. Zamora, J. Padilla, S. Sarkozy, R. Lai, and W.R. Deal, “First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process,” IEEE Electron Device Lett., vol.36, no.4, pp.327-329, April 2015.
5. [5] M.C.A.M. Koolen, J.A.M. Geelen, and M.P.J.G. Versleijen, “An improved de-embedding technique for on-wafer high-frequency characterization,” in Proc. Bipolar Circuits Technol. Meeting, Sept. 9-10, 1991, pp.188-191.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献