Highly robust X-band LNA with extremely short recovery time-Reference-Cited by-同舟云学术

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Highly robust X-band LNA with extremely short recovery time

Published:2009-06 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE MTT-S International Microwave Symposium Digest
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Author:

Rudolph Matthias,Dewitz Mike,Liero Armin,Khalil Ibrahim,Chaturvedi Nidhi,Wipf Christian,Bertenburg Ralf M.,Miller Justin,Wurfl Joachim,Heinrich Wolfgang,Trankle Gunther

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5159259/5165586/05165813.pdf?arnumber=5165813

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Transient Noise and Gain Characterization for Pulse-Operated LNAs;IEEE Microwave and Wireless Technology Letters;2024-07

2. Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA;Microelectronics Reliability;2023-11

3. Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs;2023 International Conference on Noise and Fluctuations (ICNF);2023-10-17

4. A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. Trapping Compensation for Transient Recovery in GaN LNAs;IEEE Transactions on Microwave Theory and Techniques;2023

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