A proposed collector design of double heterojunction bipolar transistors for power applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/55/8822/00388717.pdf?arnumber=388717
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. RF performance of a novel all ternary InAlAs\InGaAs DHBT;Semiconductor Science and Technology;2012-03-14
2. Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors;IEEE Transactions on Electron Devices;2010-12
3. On the design of base-collector junction of InGaAs/InP DHBT;Science in China Series E: Technological Sciences;2008-09-11
4. Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors;Japanese Journal of Applied Physics;2002-02-28
5. The state-of-the-art of GaAs and InP power devices and amplifiers;IEEE Transactions on Electron Devices;2001-03
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