SiC/SiO<sub>2</sub> interface traps effect on SiC MOSFETs Gate capacitance with biased Drain-Reference-Cited by-同舟云学术

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SiC/SiO₂ interface traps effect on SiC MOSFETs Gate capacitance with biased Drain

Published:2022-07-18 Issue: Volume: Page:
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Container-title:2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Matacena Ilaria¹,Maresca Luca¹,Riccio Michele¹,Irace Andrea¹,Breglio Giovanni¹,Castellazzi Alberto²,Daliento Santolo¹

Affiliation:

1. University Federico II,Dept. of Electrical Engineering and Information Technologies,Naples,Italy

2. Kyoto University of Advanced Science,Kyoto,Japan,615-8577

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9915553/9915704/09915748.pdf?arnumber=9915748

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interface Trap Density of Commercial 1.7 kV SiC Power MOSFETs;2023 37th Symposium on Microelectronics Technology and Devices (SBMicro);2023-08-28

2. Impedance Spectroscopy Analysis of Perovskite Solar Cell Stability;Energies;2023-06-26

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