Wide SOA and High Reliability 60-100 V LDMOS Transistors with Low Switching Loss and Low Specific On-Resistance-Reference-Cited by-同舟云学术

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Wide SOA and High Reliability 60-100 V LDMOS Transistors with Low Switching Loss and Low Specific On-Resistance

Published:2018-10 Issue: Volume: Page:
ISSN:
Container-title:2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
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Author:

Matsuda Jun-ichi,Kuwana Anna,Kojima Jun-ya,Tsukiji Nobukazu,Kobayashi Haruo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8540788/8564801/08564999.pdf?arnumber=8564999

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Step Field Plate RF LDMOS Transistor for Improved BV_DS-R _on Tradeoff and RF Performance;IEEE Transactions on Electron Devices;2022-08

2. Modeling Technologies from Analog/Mixed-Signal Circuit Designer Viewpoint;2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2022-03-06

3. Process and performance optimization of Triple‐RESURF LDMOS with Trenched‐Gate;International Journal of RF and Microwave Computer-Aided Engineering;2021-08-10

4. Optimization of High Reliability and Wide SOA 100 V N-LDMOS Transistor;IEEJ Transactions on Electronics, Information and Systems;2020-11-01

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