SHRCO: Design of an SRAM with High Reliability and Cost Optimization for Safety-Critical Applications-Reference-Cited by-同舟云学术

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SHRCO: Design of an SRAM with High Reliability and Cost Optimization for Safety-Critical Applications

Published:2024-08-18 Issue: Volume: Page:1-6
ISSN:
Container-title:2024 IEEE International Test Conference in Asia (ITC-Asia)
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Author:

Chang Yang¹,Liu Guangzhu²,Ullah Inam³,Shan Gaoyang⁴,Wen Xiaoqing⁵,Yan Aibin²

Affiliation:

1. Anhui University,School of Computer Science and Technology,Hefei,China

2. Hefei University of Technology,School of Microelectronics,Hefei,China

3. Gachon University,Department of Computer Engineering,Seongnam,Korea

4. Ajou University,Department of Software and Computer Engineering,Suwon,Korea

5. Kyushu Institute of Technology,Department of Computer Science and Networks,Fukuoka,Japan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10661305/10661306/10661340.pdf?arnumber=10661340

Reference16 articles.

1. A low power memory cell design for SEU protection against radiation effects

2. Novel Double-Node-Upset-Tolerant Memory Cell Designs Through Radiation-Hardening-by-Design and Layout

3. Design of Area-Efficient and Highly Reliable RHBD 10T Memory Cell for Aerospace Applications

4. Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

5. Radiation-Hardened 14T SRAM Bitcell With Speed and Power Optimized for Space Application

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