A High-Density Large-Ratio Fuse Based Oxide Devices for One-time-programmable Memory Applications
Author:
Affiliation:
1. School of Micro-Nano Electronics, ZHEJIANG UNIVERSITY,Hangzhou,China,310000
2. Polytechnic Institute, Zhejiang University,Hangzhou,China,310015
3. Research Center for Intelligent Chips and Devices, ZHEJIANG LAB,Hangzhou,China,311121
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9962812/9962965/09962988.pdf?arnumber=9962988
Reference5 articles.
1. A Novel Embedded OTP NVM Using Standard Foundry CMOS Logic Technology
2. The demonstration of low-cost and logic process fully-compatible OTP memory on advanced HKMG CMOS with a newly found dielectric fuse breakdown
3. A novel rewritable one-time-programming OTP (RW-OTP) realized by dielectric-fuse RRAM devices featuring ultra-high reliable retention and good endurance for embedded applications
4. Extended TDDB power-law validation for high-voltage applications such as OTP memories in High-k CMOS 28nm FDSOI technology
5. A Novel Complementary Architecture of One-time-programmable Memory and Its Applications as Physical Unclonable Function (PUF) and One-time Password
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