Optical Amplification in Er-Doped LiNbO<sub>3</sub>-on-Insulator Photonic Wire Pumped at 1480 nm Wavelength-Reference-Cited by-同舟云学术

Optical Amplification in Er-Doped LiNbO₃-on-Insulator Photonic Wire Pumped at 1480 nm Wavelength

Published:2023-10 Issue:5 Volume:59 Page:1-10
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Chen Feng¹^ORCID,Xu Qing¹,Meng Fan-Song¹,Zhang D.¹^ORCID

Affiliation:

1. Key Laboratory of Optoelectronic Information Technology, Ministry of Education, the Key Laboratory of Micro-Opto-Electro-Mechanical Systems (MOEMS) Technology, Ministry of Education, and the School of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/10189366/10180074.pdf?arnumber=10180074

Reference20 articles.

1. Erbium-Doped Lithium Niobate Thin Film Waveguide Amplifier With 16 dB Internal Net Gain

2. On‐Chip Integrated Waveguide Amplifiers on Erbium‐Doped Thin‐Film Lithium Niobate on Insulator

3. Time-dependent modeling of erbium-doped waveguide lasers in lithium niobate pumped at 980 and 1480 nm

4. Evaluation of absorption and emission cross sections of Er-doped LiNbO/sub 3/ for application to integrated optic amplifiers

5. 2.7 μm emission of Er3+-doped LiNbO3crystals and its thermal effect

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