An Erbium‐Doped Waveguide Amplifier on Thin Film Lithium Niobate with an Output Power Exceeding 100 mW

Author:

Bao Rui12,Fang Zhiwei1ORCID,Liu Jian1,Liu Zhaoxiang1,Chen Jinming1,Wang Min1,Wu Rongbo1,Zhang Haisu1,Cheng Ya12345

Affiliation:

1. The Extreme Optoelectromechanics Laboratory (XXL) School of Physics and Electronic Science East China Normal University Shanghai 200241 P. R. China

2. State Key Laboratory of Precision Spectroscopy East China Normal University Shanghai 200062 P. R. China

3. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra‐intense Laser Science Shanghai Institute of Optics and Fine Mechanics (SIOM) Chinese Academy of Sciences (CAS) Shanghai 201800 P. R. China

4. Collaborative Innovation Center of Extreme Optics Shanxi University Taiyuan 030006 P. R. China

5. Collaborative Innovation Center of Light Manipulations and Applications Shandong Normal University Jinan 250358 P. R. China

Abstract

AbstractA high‐power thin film lithium niobate (TFLN) erbium‐doped waveguide amplifier (EDWA) is demonstrated with a maximum on‐chip output power of 113 mW and a gain of 16 dB. The on‐chip integrated EDWA is composed of large mode area (LMA) waveguide structures with a total length of 7 cm and a footprint of 1 × 1 cm2. Segmented LMA waveguides are connected with waveguide tapers to achieve on‐chip mode conversion, which maintains single‐mode propagation all over the EDWA even at the waveguide bends. The design leads to a significant increase in the amplified signal power by orders of magnitude and will open an avenue for applications such as on‐chip high‐power lasers and amplifier systems.

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

East China Normal University

Publisher

Wiley

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