Influence of Geometry Effects on Thermo-Mechanical Reliability of Aluminum Bond Wires in Discrete SiC MOSFETs-Reference-Cited by-同舟云学术

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Influence of Geometry Effects on Thermo-Mechanical Reliability of Aluminum Bond Wires in Discrete SiC MOSFETs

Published:2024-04-07 Issue: Volume: Page:1-10
ISSN:
Container-title:2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
language:
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Author:

Kilian Borja¹,Maniar Youssef¹,Gleichauf Jonas¹,Wittler Olaf²,Schneider-Ramelow Martin³

Affiliation:

1. Robert Bosch GmbH, Corporate Sector Research and Advance Engineering,Renningen,Germany

2. Fraunhofer IZM,Department Environmental and Reliability Engineering,Berlin,Germany

3. Technical University Berlin,Faculty IV - Electrical Engineering and Computer Science,Berlin,Germany

Funder

Robert Bosch

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491281/10491408/10491463.pdf?arnumber=10491463

Reference23 articles.

1. A Survey of Wide Bandgap Power Semiconductor Devices

2. Investigating the mold compounds influence on power cycling lifetime of discrete power devices;Otto

3. State-of-the-art of the bond wire failure mechanism and power cycling lifetime in power electronics

4. Reliability of thick Al wire bonds in IGBT modules for traction motor drives

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