Thermal multiscale simulation of a FO-WLP SiP including a GaN Power Amplifier-Reference-Cited by-同舟云学术

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Thermal multiscale simulation of a FO-WLP SiP including a GaN Power Amplifier

Published:2024-04-07 Issue: Volume: Page:1-4
ISSN:
Container-title:2024 25th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
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Author:

Kakou N’Doua Luc Arnaud¹,Sommet Raphael¹,Brunel Laurent²,Bortolussi Vincent²,Lambert Benoit²,Nallatamby Jean-Christophe¹

Affiliation:

1. XLIM University of Limoges, UMR7252 Campus of the University of Brive, 16 rue Jules Vallès,Brive la Gaillarde,19100

2. UMS S.A.S Bâtiment Charmille, Mosaic parc de Courtabœuf, 10 avenue du Québec,Villebon-sur-Yvette,91140

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491281/10491408/10491445.pdf?arnumber=10491445

Reference5 articles.

1. Overview of Fan-out Wafer Level Package (FO-WLP)

2. GDS II Graphic Design System User’s Operating Manual;CALMA,1978

3. Comparison of GaN HEMTs Thermal Results through different measurements methodologies: Validation with 3D simulation

4. Thermal study for flip chip on FR-4 boards

5. Low Thermal Resistances at GaN–SiC Interfaces for HEMT Technology

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