Over-current Capability of SiC Devices for Short Power and Heat Pulses-Reference-Cited by-同舟云学术

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Over-current Capability of SiC Devices for Short Power and Heat Pulses

Published:2023-04-17 Issue: Volume: Page:
ISSN:
Container-title:2023 24th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
language:
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Author:

Bhadoria Shubhangi¹,Nee Hans-Peter¹

Affiliation:

1. KTH Royal Institute of Technology,Department of Electrical Engineering,Stockholm,Sweden

Funder

Hitachi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10100701/10100725/10100755.pdf?arnumber=10100755

Reference16 articles.

1. Specific heat of single-, poly- and nanocrystalline diamond

2. One-dimensional transient heat conduction in finite slab,2021

3. Heat conduction concepts, thermal resistance, and the overall heat transfer coefficient;lienhard iv;Heat Transfer Textbook,2020

4. Graphite properties and characteristics;Energy POCO Materials Tech Rep,2022

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of Short-Term Over-current Capability of SiC Devices using Microchannel Cooling below and on top of the Chip;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Over-Current Capability of Silicon Carbide and Silicon Devices for Short Power Pulses with Copper and Phase Change Materials below the Chip;Energies;2024-01-17

3. Comparison of Top and Bottom Cooling for Short Duration of Over-Currents for SiC Devices: An Analysis of the Quantity and Location of Heat-Absorbing Materials;IEEE Open Journal of Power Electronics;2024

4. Enabling Short-Term Over-current Capability of SiC Devices using Microchannel Cooling;2023 29th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC);2023-09-27

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