Simulation of Cu bulge-out by cyclic Cu surface diffusion FEM in Cu/SiCN hybrid bonding
Author:
Affiliation:
1. KU Leuven,Department of Materials Engineering,Leuven,Belgium,3001
2. imec,Leuven,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10100701/10100725/10100784.pdf?arnumber=10100784
Reference7 articles.
1. Extraction of the Appropriate Material Property for Realistic Modeling of Through-Silicon-Vias using μ-Raman Spectroscopy
2. New Cu “Bulge-Out” Mechanism Supporting Sub-Micron Scaling of Hybrid Wafer-to-Wafer Bonding;de messemaeker;Proc 73rd Electronic Components and Technology Conf,2023
3. Scalable, sub 2?m pitch, Cu/SiCN to Cu/SiCN hybrid wafer-to-wafer bonding technology;beyne;Proc 63rd International Electron Devices Meeting,2021
4. Electromigration in submicron interconnect features of integrated circuits
5. Electromigration failure by shape change of voids in bamboo lines
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Simulation of Bulge-Out Mechanism Enabling Sub-0.5 μm Scaling of Hybrid Wafer-to-Wafer Bonding;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
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