Thermal resistance characterization of GaN power HEMTs on Si, SOI, and poly-AlN substrates
Author:
Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/9146595/9152196/09152656.pdf?arnumber=9152656
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Modeling and Layout Optimization of GaN Half-Bridge IC with Integrated Drivers and Power HEMTs;Russian Microelectronics;2024-06
2. Characterization of QST substrates at mm-wave frequencies;2022 IEEE 24th Electronics Packaging Technology Conference (EPTC);2022-12-07
3. Electro-Thermal Device-Package Co-Design for Ultra-Wide Bandgap Gallium Oxide Power Devices;2022 IEEE Energy Conversion Congress and Exposition (ECCE);2022-10-09
4. GaN-based power devices: Physics, reliability, and perspectives;Journal of Applied Physics;2021-11-14
5. An Asynchronous Buck Converter by Using a Monolithic GaN IC Integrated by an Enhancement-Mode GaN-on-SOI Process;2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA);2021-11-07
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