Sol-gel derived la modified PZT thin films: structure and properties-Reference-Cited by-同舟云学术

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Sol-gel derived la modified PZT thin films: structure and properties

Published:2004-04 Issue:2 Volume:11 Page:264-270
ISSN:1070-9878
Container-title:IEEE Transactions on Dielectrics and Electrical Insulation
language:en
Short-container-title:IEEE Trans. Dielect. Electr. Insul.

Author:

Singh R.,Chandra S.,Sharma S.,Tripathi A.K.,Goel T.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/94/28688/01285896.pdf?arnumber=1285896

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced Ferroelectric and Piezoelectric Properties of (1−x)PMN-xPT Ceramics Based on a Partial Oxalate Process;Materials;2018-11-12

2. Nonlinear current–voltage behavior in PZT thin films;Applied Physics A;2017-04-12

3. Room temperature ferromagnetic and ferroelectric properties of Bi1−xCaxMnO3 thin films;AIP Advances;2014-11

4. Highly reliable bipolar resistive switching in sol-gel derived lanthanum-doped PbTiO3 thin film: Coupling with ferroelectricity?;Acta Mechanica Sinica;2014-08

5. Enhanced dielectric and ferroelectric properties of Pb1−3x/2Lax(Zr0.5Ti0.5)O3 thin films with low lanthanum substitution;Applied Surface Science;2011-02

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