Highly reliable bipolar resistive switching in sol-gel derived lanthanum-doped PbTiO3 thin film: Coupling with ferroelectricity?-Reference-Cited by-同舟云学术

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Highly reliable bipolar resistive switching in sol-gel derived lanthanum-doped PbTiO3 thin film: Coupling with ferroelectricity?

Published:2014-08 Issue:4 Volume:30 Page:526-532
ISSN:0567-7718
Container-title:Acta Mechanica Sinica
language:en
Short-container-title:Acta Mech Sin

Author:

Wang Ying,Chen Wei-Jin,Zhang Xiao-Yue,Ma Wen-Jing,Wang Biao,Zheng Yue

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Computational Mechanics

Link

http://link.springer.com/content/pdf/10.1007/s10409-014-0057-2.pdf

Reference38 articles.

1. Cao, X., Li, X., Gao, X., et al.: All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature. J. Phys. D: Appl. Phys. 44, 255104 (2011)

2. Waser, R., Aono, M.: Nanoionics-based resistive switching memories. Nature Mater. 6, 833–840 (2007)

3. Ielmini, D., Nardi, F., Cagli, C.: Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories. Nanotechnology 22, 254022 (2011)

4. Choi, T., Lee, S., Choi, Y. J., et al.: Switchable ferroelectric diode and photovoltaic effect in BiFeO3. Science 324, 63–66 (2009)

5. Jiang, A.Q., Wang, C., Jin, K.J., et al.: A resistive memory in semiconducting BiFeO3 thin-film capacitors. Adv. Mater. 23, 1277–1281 (2011)

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