Surface Acoustic Waves in Reverse-Biased AlGaN/GaN Heterostructures-Reference-Cited by-同舟云学术

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Surface Acoustic Waves in Reverse-Biased AlGaN/GaN Heterostructures

Published:2008-07 Issue:7 Volume:55 Page:1585-1591
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shigekawa Naoteru,Nishimura Kazumi,Yokoyama Haruki,Hohkawa Kohji

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4545026/04545053.pdf?arnumber=4545053

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gigahertz Low-Loss Surface Acoustic Wave Devices Based on ScAlN/Si Structures;Journal of Electronic Materials;2023-09-12

2. Tilted Interdigital-transducer in NS-SAW Resonator for Transverse Mode Suppression;2022 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium (EFTF/IFCS);2022-04-24

3. Wideband and Low-Loss Surface Acoustic Wave Filter Based on 15° YX-LiNbO₃/SiO₂/Si Structure;IEEE Electron Device Letters;2021-03

4. Label-Free Biosensors Based on III-Nitride Semiconductors;Springer Series on Chemical Sensors and Biosensors;2017

5. Mode switching of acoustic phonons by external bias;AIP Conference Proceedings;2013

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