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Ultralow-Loss SiC Floating Junction Schottky Barrier Diodes (Super-SBDs)

  • Published:2008-08 Issue:8 Volume:55 Page:1954-1960
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Nishio Johji,Ota Chiharu,Hatakeyama Tetsuo,Shinohe Takashi,Kojima Kazutoshi,Nishizawa Shin-Ichi,Ohashi Hiromichi

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 27 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impact of the Island Layout on the Performance of the 4H-SiC Floating Island Device;Journal of Physics: Conference Series;2024-08-01

2. Design and analysis of novel high-performance thick epitaxial SiC radiation detector with low operating voltage by multiple p-type buried layers;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2024-01

3. 4H-SiC Floating Island JBS with Multi-Layer Floating Field Ring Termination;2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS);2023-11-27

4. Effect of substrate thinning on heavy ion induced single event effect in silicon carbide power junction barrier Schottky diodes;Microelectronics Reliability;2023-11

5. A Novel Solution to the Turn-On Recovery Problem of the Floating Island Device;IEEE Transactions on Electron Devices;2023-09
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