Optimization of Tilted Profile in Ultra-High Aspect Ratio Etch Process for 3D NAND Flash Memory-Reference-Cited by-同舟云学术

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Optimization of Tilted Profile in Ultra-High Aspect Ratio Etch Process for 3D NAND Flash Memory

Published:2021-04-08 Issue: Volume: Page:
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Container-title:2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

He Jinqing,Xia Zhiliang,Wang Meng,Zhang Guangxuan,Dou Haiqing,Huo Zongliang

Funder

National Key Research and Development Program of China

National Science and Technology Major Project of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9420829/9420830/09420902.pdf?arnumber=9420902

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Individual Effects of Various Plasma-Related Factors on the High Aspect Ratio Oxide Etching Process at Low-Frequency Bias Power Using an Inductively Coupled Plasma System;Plasma Chemistry and Plasma Processing;2023-08-08

2. Review of virtual wafer process modeling and metrology for advanced technology development;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-07-12

3. BBCube 3D Integration Technology Utilizes WOW and COW Hybrid Processes;Journal of The Japan Institute of Electronics Packaging;2023-07-01

4. Noble gas effect on ACL etching selectivity to SiO₂ films;Plasma Processes and Polymers;2023-06-08

5. Interface engineering of 9X stacked 3D NAND flash memory using hydrogen post-treatment annealing;Nanotechnology;2022-10-31

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