Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors-Reference-Cited by-同舟云学术

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Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors

Published:2016-11 Issue:11 Volume:64 Page:3946-3955
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Avolio Gustavo^ORCID,Raffo Antonio,Vadala Valeria,Vannini Giorgio,Schreurs Dominique M. M.-P.^ORCID

Funder

FWO Vlaanderen, Belgium

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/7733167/07579153.pdf?arnumber=7579153

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. Time-Efficient Adaptive Procedure for Identification of Multitone X-Parameters;IEEE Transactions on Instrumentation and Measurement;2023

4. A Broadband PA Design Based on Bayesian Optimization Augmented by Dynamic Feasible Region Shrinkage;IEEE Microwave and Wireless Components Letters;2022-10

5. 200-W GaN PA Design Based on Accurate Multicell Transistor Modeling;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

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