An Unconventional Measurement Technique for the Nonlinear Characterization of mm-Wave GaN HEMT
Author:
Affiliation:
1. University of Milano-Bicocca,Department of Physics,Italy
2. University of Ferrara,Department of Engineering,Italy
3. University of Rome Tor Vergata,Department of Engineering,Italy
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10288583/10288635/10288823.pdf?arnumber=10288823
Reference10 articles.
1. Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs
2. A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique
3. A New Modeling Technique for Microwave Multicell Transistors Based on EM Simulations
4. How Large-Signal Measurement Techniques Improve the Accuracy of Microwave Transistor Nonlinear Models
5. A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers
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