Solid-State Terahertz Superresolution Imaging Device in 130-nm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

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Solid-State Terahertz Superresolution Imaging Device in 130-nm SiGe BiCMOS Technology

Published:2017-11 Issue:11 Volume:65 Page:4357-4372
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Grzyb Janusz^ORCID,Heinemann Bernd,Pfeiffer Ullrich R.

Funder

German Research Fundation within the frame of the Reinhart Koselleck Project and the program ESSENCE

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/8094487/07891505.pdf?arnumber=7891505

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High specificity THz metamaterial-based biosensor for label-free transcription factor detection in melanoma diagnostics;Scientific Reports;2023-11-24

2. Near-field imaging and spectroscopy of terahertz resonators and metasurfaces [Invited];Optical Materials Express;2023-10-03

3. A 120-GHz Class-F Frequency Doubler With 7.8-dBm P_OUT in 55-nm Bulk CMOS;IEEE Journal of Solid-State Circuits;2023-08

4. THz Systems Exploiting Photonics and Communications Technologies;IEEE Journal of Microwaves;2023-01

5. A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range;2021 51st European Microwave Conference (EuMC);2022-04-04

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