Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer-Reference-Cited by-同舟云学术

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Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer

Published:2010-05 Issue:5 Volume:58 Page:1077-1088
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Chieh Kai Yang ,Roblin Patrick,De Groote Fabien,Ringel Steven A,Rajan Siddharth,Teyssier Jean Pierre,Poblenz Christiane,Yi Pei ,Speck James,Mishra Umesh K

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx5/22/5463243/05445006.pdf?arnumber=5445006

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors;Electronics;2023-07-11

2. Equivalent small-signal model of InP-based HEMTs with accurate radiation effects characterization;Journal of Applied Physics;2023-05-25

3. High-Temperature HEMT Model;IEEE Transactions on Electron Devices;2022-09

4. RF Extraction of Thermal Resistance for GaN HEMTs on Silicon;IEEE Transactions on Electron Devices;2022-05

5. A New Hybrid Method for Extracting Bias and Temperature-Dependent Source/Drain Access Resistances in Passivated GaN HEMTs;IEEE Microwave and Wireless Components Letters;2021

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