A New Hybrid Method for Extracting Bias and Temperature-Dependent Source/Drain Access Resistances in Passivated GaN HEMTs-Reference-Cited by-同舟云学术

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A New Hybrid Method for Extracting Bias and Temperature-Dependent Source/Drain Access Resistances in Passivated GaN HEMTs

Published:2021 Issue: Volume: Page:1-4
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Li Mengjie^ORCID,Feng Feng^ORCID,Li Zhao^ORCID,Lin Qian^ORCID,Zhang Qi-Jun^ORCID

Funder

West Light Youth Talent Program of the Chinese Academy of Sciences

Natural Science Foundation of Qinghai Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/4357983/09637495.pdf?arnumber=9637495

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics‐based compact models of GaN HEMTs for high power RF applications: A review (Invited Paper);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07

2. An Efficient Extraction of the Bias Dependent Extrinsic Resistances of the HEMT GaN/SiC;2023 2nd International Conference on Electronics, Energy and Measurement (IC2EM);2023-11-28

3. On large-signal modeling of GaN HEMTs: past, development and future;Chip;2023-09

4. A Neural Network-Based Hybrid Physical Model for GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2022-11

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