Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications

Published:2016-11 Issue:11 Volume:64 Page:3483-3491
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Alim Mohammad Abdul,Rezazadeh Ali A.^ORCID,Gaquiere Christophe

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/7733173/07567596.pdf?arnumber=7567596

Cited by 60 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of temperature on threshold voltage instability under negative bias in ferroelectric charge trap (FEG) GaN-HEMT;Applied Physics Letters;2024-09-02

2. Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects;Physica Scripta;2024-03-27

3. An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs;physica status solidi (a);2024-01-31

4. Vulnerability of $L$-Band LNA to the Out-of-Band HPM;IEEE Transactions on Plasma Science;2024

5. Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT;Journal of Computational Electronics;2023-12-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP