Modeling and analysis of coupling between TSVs, metal, and RDL interconnects in TSV-based 3D IC with silicon interposer

Author:

Yoon Kihyun,Kim Gawon,Lee Woojin,Song Taigon,Lee Junho,Lee Hyungdong,Park Kunwoo,Kim Joungho

Publisher

IEEE

Cited by 32 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Research on the Reliability of Advanced Packaging under Multi-Field Coupling: A Review;Micromachines;2024-03-22

2. Minimization of Electrical Signal Interference with Appropriate Core Material for 3D IC at THz Applications;Transactions on Electrical and Electronic Materials;2023-11-29

3. Design of a Low-pass Filter Based on the Through-Silicon-Via Structure;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14

4. Signal Integrity Analysis of Neuronal Spike Signal in 3-D Packaging;IEEE Transactions on Signal and Power Integrity;2023

5. Equivalent Circuit and Parasitic Parameter Extraction of 3D comb-like Redistribution Layer Applied for FOWLP;2022 23rd International Conference on Electronic Packaging Technology (ICEPT);2022-08-10

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