Enhanced injection in n/sup ++/-poly/SiO/sub x//SiO/sub 2//p-sub MOS capacitors for low-voltage nonvolatile memory applications: experiment
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/16/17504/00808071.pdf?arnumber=808071
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The investigation of an amorphous SiOx system for charge storage applications in nonvolatile memory at low temperature process;Materials Science and Engineering: B;2010-11
2. Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics;Journal of The Electrochemical Society;2009
3. Engineered Barriers With Hafnium Oxide for Nonvolatile Application;IEEE Transactions on Electron Devices;2006-09
4. Improvement of the current-voltage characteristics of a tunneling dielectric by adopting a Si3N4∕SiO2∕Si3N4 multilayer for flash memory application;Applied Physics Letters;2005-10-10
5. Conduction and trapping mechanisms in SiO[sub 2] films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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