Investigation on Device Characteristics of MOSFET Transistor Placed Under Bond Pad for High-Pin-Count SOC Applications
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/6144/29407/01331539.pdf?arnumber=1331539
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