A Survey of Heterojunction Bipolar Transistor (HBT) Device Reliability
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx5/6144/28721/01288330.pdf?arnumber=1288330
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Base Transit Time Investigation of InP/InGaAs HBT Optoelectronic Mixer Using Different Base Doping Profiles;2023 5th Iranian International Conference on Microelectronics (IICM);2023-10-25
2. eSWIR and MWIR gain-based photodetectors in type-II superlattices: past, present, and future;Image Sensing Technologies: Materials, Devices, Systems, and Applications VIII;2021-04-12
3. Band-structure-engineered high-gain LWIR photodetector based on a type-II superlattice;Light: Science & Applications;2021-01-14
4. Type-II InAs/GaSb/AlSb superlattice-based heterojunction phototransistors: back to the future;Quantum Sensing and Nano Electronics and Photonics XV;2018-01-26
5. Impact of scaling base thickness on the performance of heterojunction phototransistors;Nanotechnology;2017-02-02
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