Base Transit Time Investigation of InP/InGaAs HBT Optoelectronic Mixer Using Different Base Doping Profiles
Author:
Affiliation:
1. AmirKabir University of Technology (AUT),Photonics Research Lab.(PRL),Electrical Engineering Department
2. K. N. Toosi University of Technology (KNTU),Electrical Engineering Department
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10443089/10443077/10443084.pdf?arnumber=10443084
Reference22 articles.
1. Conversion Gain Improvement of InP/InGaAs HBT Opto-Electronic Mixer Using Nearly Gaussian Doping Profile and Linear Grading of Composition in Base Region;Kaatuzian;Electrical and Electronic Engineering,2016
2. Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer
3. Theory and technology of manufacturing semiconductor devices;Kaatuzian,2022
4. A Survey of Heterojunction Bipolar Transistor (HBT) Device Reliability
5. Fundamentals of III-V Devices, HBTs, MESFETs, and HFETs/HEMTs;Liu,1999
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