From 2D TCAD Model to a Physical 1D Equivalent Circuit Model for a GaN HEMT-Reference-Cited by-同舟云学术

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From 2D TCAD Model to a Physical 1D Equivalent Circuit Model for a GaN HEMT

Published:2023-11-08 Issue: Volume: Page:
ISSN:
Container-title:2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC)
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Author:

Nunes Luís Cótimos¹,Carlos Pedro José¹

Affiliation:

1. Universidade de Aveiro,Instituto de Telecomunicações,Aveiro,Portugal

Funder

Huawei Technologies

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10321701/10321765/10321778.pdf?arnumber=10321778

Reference12 articles.

1. Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

2. A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

3. Deep-Level Traps in AlGaN/GaN- and AlInN/GaN-Based HEMTs With Different Buffer Doping Technologies

4. Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

5. A quasi-two-dimensional HEMT model for microwave CAD applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Consistent Q(v)-I(v) AlGaN/GaN HEMT Nonlinear Equivalent-Circuit Modeling;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A Physics-Based 1-D Equivalent Circuit Model for an AlGaN/GaN HEMT;IEEE Transactions on Microwave Theory and Techniques;2024

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