CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory-Reference-Cited by-同舟云学术

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CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory

Published:2022 Issue: Volume: Page:1-1
ISSN:1545-5971
Container-title:IEEE Transactions on Dependable and Secure Computing
language:
Short-container-title:IEEE Trans. Dependable and Secure Comput.

Author:

Yu Ta-Ching¹,Wu Chin-Hsien²,Liao Yan-Qi¹

Affiliation:

1. Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, Taiwan

2. Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan, Taiwan, 106

Funder

Ministry of Science and Technology Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8858/4358699/09782532.pdf?arnumber=9782532

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. LDPC Level Prediction Toward Read Performance of High-Density Flash Memories;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-10

2. Towards LDPC Read Performance of 3D Flash Memories with Layer-induced Error Characteristics;ACM Transactions on Design Automation of Electronic Systems;2023-04-18

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