Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED-Reference-Cited by-同舟云学术

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Design and Performance Analysis of Electron Blocking Layer free GaN/AlInN/GaN Nanowire Deep-Ultraviolet LED

Published:2022-12-11 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Das Samadrita¹,Lenka Trupti Ranjan¹,Talukdar Fazal Ahmed¹,Crupi Giovanni²,Nguyen Hieu Pham Trung³

Affiliation:

1. National Institute of Technology,Department of Electronics and Communication Engineering,Silchar,India

2. University of Messina,BIOMORF Department,Messina,Italy,98125

3. New Jersey Institute of Technology,Department of Electrical and Computer Engineering,Newark,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117760.pdf?arnumber=10117760

Reference18 articles.

1. Sub-milliwatt AlGaN nanowire tunnel junction deep ultraviolet light emitting diodes on silicon operating at 242 nm

2. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

3. Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

4. Effects of Spontaneous Polarization on Luminous Power of GaN/AlGaN Multiple Quantum Well UV-LEDs for Light Technology

5. Influence of Prestrained Graded InGaN interlayer on the Optical Characteristics of InGaN/GaN MQW-based LEDs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-Nitride Nanowire LEDs for Enhanced Light Technology;2023 IEEE 33rd International Conference on Microelectronics (MIEL);2023-10-16

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