Controlled Growth of Electronic Grade 2D MoSe<sub>2</sub>-WSe<sub>2</sub> Lateral Heterostructure and Optoelectronic Characteristics-Reference-Cited by-同舟云学术

Controlled Growth of Electronic Grade 2D MoSe₂-WSe₂ Lateral Heterostructure and Optoelectronic Characteristics

Published:2022-12-11 Issue: Volume: Page:
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Container-title:2022 IEEE International Conference on Emerging Electronics (ICEE)
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Author:

Ray Purbasha¹,Kundu Baisali¹,Nayak Biswajeet¹,Giri Soumen²,Chakraborty Suman Kumar¹,Banerjee Rajdeep³,Pradhan Monalisa⁴,Basori Rabaya⁵,Pradhan Gopal K.⁴,Goswami Dipak Kumar³,Sahoo Prasana Kumar¹

Affiliation:

1. Indian Institute of Technology Kharagpur,Quantum Materials and Device Research Lab, Materials Science Centre,Kharagpur,India

2. Indian Institute of Technology Kharagpur,Materials Science Centre,Kharagpur,India

3. Indian Institute of Technology Kharagpur,Department of Physics,Kharagpur,India

4. School of Applied Sciences, Kalinga Institute of Technology- Deemed to be University,Dept. of Physics,Bhubaneswar,India

5. Indian Institute of Technology Kharagpur,Nanoscience and Technology,Kharagpur,India

Funder

Indian Institute of Technology Kharagpur

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117741.pdf?arnumber=10117741

Reference15 articles.

1. Simultaneous electrical and thermal rectification in a monolayer lateral heterojunction

2. Lateral Two-Dimensional Material Heterojunction Photodetectors with Ultrahigh Speed and Detectivity

3. 1D p–n Junction Electronic and Optoelectronic Devices from Transition Metal Dichalcogenide Lateral Heterostructures Grown by One‐Pot Chemical Vapor Deposition Synthesis

4. Quantum engineering of transistors based on 2D materials heterostructures

5. Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic Response