Author:
Feick H.,Fretwurst E.,Moll M.,Lindstrom G.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics
Cited by
6 articles.
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1. Gated-diode study of corner and peripheral leakage current in high-energy neutron irradiated silicon p-n junctions;IEEE Transactions on Nuclear Science;2003-04
2. Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2002-01
3. Displacement Damage in Group IV Semiconductor Materials;Radiation Effects in Advanced Semiconductor Materials and Devices;2002
4. Analysis of divacancy related traps induced by proton, neutron and gamma radiation in high resistivity silicon detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-04
5. New experimental and analysis methods in I-DLTS;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;1999-04