540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier-Reference-Cited by-同舟云学术

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540-meV Hole Activation Energy for GaSb/GaAs Quantum Dot Memory Structure Using AlGaAs Barrier

Published:2013-06 Issue:6 Volume:34 Page:759-761
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cui Kai,Ma Wenquan,Zhang Yanhua,Huang Jianliang,Wei Yang,Cao Yulian,Guo Xiaolu,Li Qiong

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6517498/06515616.pdf?arnumber=6515616

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantitative description of carrier dynamics in GaSb/GaAs quantum-ring-with-dot structures;Journal of Physics D: Applied Physics;2021-09-28

2. Modelling and simulation of carrier transport in quantum dot memory device for longer data retention and minimized power consumption;Journal of Computational Electronics;2020-09-16

3. Detecting Single Photons Using Capacitive Coupling of Single Quantum Dots;ACS Photonics;2018-03-09

4. Size Optimization of InAs/GaAs Quantum Dots for Longer Storage Memory Applications;Nanoelectronic Materials and Devices;2017-11-28

5. Absorption dynamics of type-II GaSb/GaAs quantum dots;Optical Materials Express;2017-03-29

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