A Novel 65 nm Radiation Tolerant Flash Configuration Cell Used in RTG4 Field Programmable Gate Array

Author:

Wang Jih-Jong,Rezzak Nadia,Dsilva Durwyn,Jia James,Cai Alex,Hawley Frank,McCollum John,Hamdy Esmat

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Programming mechanism and characteristics of Sense-Switch pFlash cells;Microelectronics Reliability;2023-04

2. TID and SEE characterization of Microchip PolarFire® SoC FPGA;2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS);2022-10-03

3. Structure Design and Characteristics of Sense-Switch pFlash Devices;2021 IEEE 3rd International Conference on Circuits and Systems (ICCS);2021-10-29

4. Reliability evaluation on sense-switch p-channel flash;Journal of Semiconductors;2021-08-01

5. Copper Trace Fatigue Life Modeling for Rigid Electronic Assemblies;IEEE Transactions on Device and Materials Reliability;2021-03

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