Advanced Signal Processing of Photo-Excited Current Spectroscopy Based on Trap State Distribution for Photo-Sensor Applications
Author:
Affiliation:
1. Hallym University Chuncheon,Department of Electronic Engineering,Gangwon-do,Korea
2. Hallym University Chuncheon,Smart Computing Laboratory,Gangwon-do,Korea
3. Hallym University,Division of Software,Chuncheon, Gangwon-do,Korea
Funder
National Research Foundation
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10048895/10048896/10048911.pdf?arnumber=10048911
Reference17 articles.
1. A Physical Model for Metal–Oxide Thin-Film Transistor Under Gate-Bias and Illumination Stress
2. Kinetics of defect creation in amorphous silicon thin film transistors
3. Interfacial Trap Density-of-States in Pentacene- and ZnO-Based Thin-Film Transistors Measured via Novel Photo-excited Charge-Collection Spectroscopy
4. Reduction of Bias and Light Instability of Mixed Oxide Thin-Film Transistors
5. Suppression of persistent photo-conductance in solution-processed amorphous oxide thin-film transistors
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