Kinetics of defect creation in amorphous silicon thin film transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1565689
Reference28 articles.
1. Charge trapping instabilities in amorphous silicon‐silicon nitride thin‐film transistors
2. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
3. Time and temperature dependence of instability mechanisms in amorphous silicon thin‐film transistors
4. Microscopic Aspects of the Staebler-Wronski Effect
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