Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering-Reference-Cited by-同舟云学术

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial Engineering

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE International Memory Workshop (IMW)
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Author:

Chen Zhuo¹,Ronchi Nicolò¹,Walke Amey¹,Banerjee Kaustuv¹,Popovici Mihaela Ioana¹,Katcko Kostantine¹,Van Den Bosch Geert¹,Rosmeulen Maarten¹,Afanas’Ev Valeri¹,Van Houdt Jan¹

Affiliation:

1. imec,Leuven,Belgium,3001

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10145914/10145815/10145930.pdf?arnumber=10145930

Reference20 articles.

1. Logic Compatible High-Performance Ferroelectric Transistor Memory

2. Electrical Investigation of Wake-Up in High Endurance Fatigue-Free La and Y Doped HZO Metal–Ferroelectric–Metal Capacitors

3. Ferroelectricity in Simple Binary ZrO2 and HfO2

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5. Improvement in the polarization properties in thin ferroelectric Hf_0.5Zr_0.5O₂ films by two-step flash lamp annealing;Japanese Journal of Applied Physics;2024-02-01