Simulation of GaAs p-i-n diodes
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/149/00002473.pdf?arnumber=2473
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The phase invariance condition for the ultra-wideband voltage controlled attenuator;2008 3rd International Symposium on Communications, Control and Signal Processing;2008-03
2. Bias-dependent small-signal monolithic PIN diode modeling;International Journal of RF and Microwave Computer-Aided Engineering;2001
3. Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation;Solid-State Electronics;2000-01
4. Mixed-mode circuit simulation with full-wave analysis of interconnections;IEEE Transactions on Electron Devices;1997
5. A two-dimensional analytical model of homojunction GaAs BMFET structures;Solid-State Electronics;1996-08
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