Evaluation of GaAs Schottky gate bipolar transistor (SGBT) by electrothermal simulation

Author:

Hossin M.,Johnson C.M.,Wright N.G.,O’Neill A.G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Pendharkar S, Shenai K Performance evaluation of high power GaAs Schottky and silicon pin rectifiers in hard and soft switching applications. In: Proc. IEEE APEC, 1996. 1. p. 224–38

2. High temperature high power Schottky diodes;Wright;Materials Science and Engineering B,1997

3. Simulation of GaAs p–i–n diodes;Gopinath;IEEE Trans. Electron Devices,1988

4. Sulphur based surface passivation for high voltage GaAs Schottky diodes;Wright;Solid State Electronics,1998

5. Baliga BJ, Adler MS, Gray PV, Love R, Zommer N. In: IEEE IEDM Digest, Abstract 10.6 1982: 264–267

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